UniSiC closes multimillion-yuan angel round

On August 4, UniSiC, a Silicon Carbide (SiC) power semiconductor module and application solutions provider, announced the completion of its angel round worth tens of millions of yuan.

On August 4, UniSiC, a Silicon Carbide (SiC) power semiconductor module and application solutions provider, announced the completion of its angel round worth tens of millions of yuan.

This round of financing was funded exclusively by Atom Ventures, with SPSP Venture Capital acting as the sole financial advisor.

UniSiC mainly provides end customers with complete “module +” customized application solutions, including silicon carbide power semiconductor modules, drive circuits and silicon carbide power electronic system application services.

Currently, the company’s 900V/820A@25℃ three-phase SiC power semiconductor module based on the HPD package has been delivered in small batches.

As for the team, Dr. Mao Saijun, CEO of UniSiC, graduated from Technische Universiteit Delft, the Netherlands, and was the technical leader of broadband power semiconductor device packaging and applications at GE Global Research and Development Center.

Dr. Lei Guangyin, CTO, has studied and worked at the prestigious Center for Power Electronics Studies (CPES) and Ford Motor Research Center (USA), where he was involved in the development of high-tech nano-materials, high power density semiconductor power module design, and the development of high-performance motor controllers for new energy vehicles.

Disclaimer: This is an article created by Michael Liang for Chinasdg.org. You can find the original article here: https://chinasdg.org/2020/08/04/unisic-closes-multimillion-yuan-angel-round/.

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